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2N3632 Transistor, NPN Silicon Planar Epitaxial, MEV

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2N3632 Transistor, NPN Silicon Planar Epitaxial, MFR: MEV


Designed for VHF power amplifiers and oscilalator (175 MHz) applications.  The use of passivated epitaxial techniques minimizes saturation voltage at high currents.  Similar to SD1070.


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Details

2N3632 Transistor, NPN Silicon Planar Epitaxial

Designed for VHF power amplifiers and oscilalator (175 MHz) applications.  The use of passivated epitaxial techniques minimizes saturation voltage at high currents.  Similar to SD1070.

Specifications:

  • Frequency:  175 MHz
  • Voltage: 28v
  • Power Out:  13.5w

Features:

  • TO-60 Package - Collector Isolated
  • Low Saturation Voltage
  • Low Leakage
  • Epitaxial Planar Structure
  • Isolated Collector

MFR: MEV

Made in Russia

 

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer No
Condition New
NOS N/A
Call For Price N/A
Manufacturer Name ESAREM TECHNOLOGIES

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