Details
2N3819 National Semiconductor N-Channel RF Amplifier TO-92 Package
The 2N3819 is a N−Channel RF Amplifier transistor designed for RF amplifier and mixer applications operating up to 450Mhz, and for analog switching requiring low capacitance.
- Absolute Maximum Ratings: (TC = +25°C, Note 1 unless otherwise specified)
- Drain−Gate Voltage, VDG: 25V
- Gate−Source Voltage, VGS: −25V
- Drain Current, ID: 50mA
- Forward Gate Current, IGF: 10 mA
- Total Device Dissipation (TA = +25°C ), PD: 350mW
- Derate Above +25°C: 2.8mW/°C
- Storage Temperature Range, TSTG: −55° to 150°C
- Thermal Resistance, Junction−to−Case, RthJC: 125°C/W
- Thermal Resistance, Junction−to−Ambient, RthJA: 35°C/W
MFR: Natioanal Semiconductor
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | National Semiconductor |