Details
2N4431 Microsemi RF & Microwave Power Transistor (NOS)
Microwave Power Trabnsistor for Class C Applications. Designed for reliable operation in the 1 GHz region.
- High Power Gain: 5W @1GHz
- Package: MT66
- Collector to Base Voltage: 55V
- Collector to Emitter Voltage: 10v
- Emitter to Base Voltage: 3.5v
- Continuous Collector Current: 2wA
- Total Dissapation at 25°C: 10W
- Junction Temperature: 200°C / 392°F
MFR: Microsemi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Microsemi |
