Details
2N5179 Motorola Silicon NPN RF Transistor 12 V 0.05 Amp (NOS)
- Transistor Polarity: NPN
- Maximum Collector Emitter Voltage: 12 V
- Maximum Collector Base Voltage: 20 V
- Minimum DC Current Gain: 25 @ 0.003A
- Power Dissipation: 300mW
- Configuration: Single
- Maximum Collector Emitter Saturation Voltage 0.4V@1mA@10mA
- Number of Elements per Chip 1
- Output Power: 300mW
- Product Type: Bipolar RF
- Maximum Emitter Base Voltage: 2.5V
- Maximum Base Emitter Saturation Voltage: 1V@1mA@10mA
- Maximum Operating Frequency: 1500MHz
- Maximum Collector Current: 0.05A
- Minimum Operating Temperature: -65°C
- Maximum Operating Temperature: 150°C
- Mounting: Through Hole
New Old Stock * No longer available for export
MFR: Motorola
Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | Motorola |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Motorola |