Details
2SB560 PNP Transistor (NOS)
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.75 W
- Maximum Collector-Base Voltage |Vcb|: 100 V
- Maximum Collector-Emitter Voltage |Vce|: 80 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.7 A
- Max. Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 50 MHz
- Collector Capacitance (Cc): 30 pF
- Forward Current Transfer Ratio (hFE), MIN: 60
- Package: TO92
New Old Stock * No longer available for export
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | DALBANI |
