Details
2SC1955 Toshiba Silicon NPN Epitaxial Planar Type Transistor (NOS)
- Collector-base Capacitance-Max: 15.0 pF
- Collector Current-Max (IC): 0.8 A
- Collector-emitter Voltage-Max: 17.0 V
- Configuration: Single
- JESD-30 Code: O-MBCY-W3
- JESD-609 Code: e0
- Number of Elements: 1.0
- Number of Terminals : 3
- Package Body Material: Metal
- Polarity/Channel Type: NPN
- Surface Mount: No
- Terminal Finish: Tin Lead
- Terminal Form: Wire
- Terminal Position: Bottom
- Transistor Application: Amplifier
- Transistor Element Material: Silicon
New Old Stock * No longer available for export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | No |
