Details
2SC1964 Mitsubishi Silicon NPN Transistor (NOS)
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage |Vcb|: 80 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 4 V
- Maximum Collector Current |Ic max|: 3.5 A
- Max. Operating Junction Temperature (Tj): 175 °C
- Transition Frequency (ft): 75 MHz
- Forward Current Transfer Ratio (hFE), MIN: 10
- Package: TO220
New Old Stock, No longer available for export
MFR: Mitsubishi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
