2SC2782A Toshiba NPN Silicon Epitaxial Planar Transistor (NOS)

The 2SC2782A is an NPN bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a silicon epitaxial planar transistor that is commonly used in various electronic applications, particularly in high-frequency and high-power amplifier circuits.

The transistor is designed to operate with a maximum collector-emitter voltage (Vce) of 120 volts and a maximum collector current (Ic) of 8 amps. It has a high current gain and low noise figure, which makes it suitable for use in low-level amplifier circuits. The 2SC2782A transistor also has a high cutoff frequency, making it suitable for use in high-frequency amplifier circuits.

The transistor is manufactured using a silicon epitaxial planar process, which allows for high manufacturing yield and low cost. The planar structure of the transistor also results in low parasitic capacitance and high switching speed, making it suitable for use in switching circuits.

The 2SC2782A transistor is a high-quality and reliable component that offers excellent performance in a wide range of electronic applications. Its high current gain, low noise figure, high cutoff frequency, and low parasitic capacitance make it a popular choice for use in various high-frequency and high-power amplifier circuits.