Details
2SC3018 Mitsubishi NPN Epitaxial Planar Transistor (NOS)
2SC3018 is a silicon NPN epitaxial planar type transistor designed for 7.2v VHF power amplifier applications.
- High Gain: Gpe > 13db @f=175 MHz, Vcc=7.2v Pin=0.15w
- Convenient ceramic type package with flange for high gain and excellent heat dissipation
- Emitter ballasted construction
- High Ruggedness: Ability to withstand more than 20:1 load VSWR when operated at Vcc=9v, Po=3w.
Application
Output stage of 2w portable type transmitter in VHF band.
New Old Stock * No longer available for export
MFR: Mitsubishi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | N/A |
| ISBN | N/A |
| NATO Stock Number | N/A |
| Manufacturer Part Number | N/A |
| Manufacturer | No |
| Condition | New |
| NOS | Yes |
| Call For Price | No |
| Manufacturer Name | MITSUBISHI ELECTRIC US, INC. |