Details
2SC3021 Mitsubishi Silicon NPN Epitaxial Planar Transistor (NOS)
- For output stage of 5W power amplifiers and drive stage of higher power amplifiers in UHF band.
- HIgh power gain: ≥ 7.6dB
- Emitter ballasted construction
- High Ruggedness: Ability to withstand more than 20:1 load VSWR when operated at 15.2v, 520MHz, 7W.
- Flange type ceramic package
New Old Stock * No longer available for export
MFR: Mitsubishi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
