Details
2SC3419Y Toshiba NPN Epitaxial Transistor (NOS)
- Low Saturation Voltage: Vce (sat) = 0.25v (typ.) (Ic=500mA, Ib = 50mA)
- High Collector Power Dissaption: Pc=1.2w (Ta=25°C)
- Complementary to 2SA1356
New Old Stock * Not for Export
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Toshiba |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
Product Attachments
| 2SC3419 |  155.26 KB |
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