Details
2SC495 Toshiba Silicon NPN Epitaxial Transistor (NOS)
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 0.55 W
- Maximum Collector-Base Voltage |Vcb|: 70 V
- Maximum Collector-Emitter Voltage |Vce|: 50 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.8 A
- Max. Operating Junction Temperature (Tj): 125 °C
- Transition Frequency (ft): 50 MHz
- Collector Capacitance (Cc): 20 pF
- Forward Current Transfer Ratio (hFE), MIN: 40
- Noise Figure, dB: -
- Package: TO126
New Old Stock * No longer available for export
MFR: Toshia Corporation
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | Toshiba |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |