Details
2SC731 Matsushita Silicon NPN Epitaxial Transistor (NOS)
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 2.5 W
- Maximum Collector-Base Voltage: 40 V
- Maximum Collector-Emitter Voltage: 20 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 1 A
- Max. Operating Junction Temperature: 175 °C
- Transition Frequency: 350 MHz
- Forward Current Transfer Ratio: 20
New Old Stock * No longer available for export
MFR: Matsushita
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Matsushita |
