Details
2SD313E NPN Silicon Epitaxial Power Transistor
- Type Designator: 2SD313E
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 30 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 60 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 4 MHz
- Collector Capacitance (Cc): 130 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
- Package: TO220
- Complementary to the 2SB507 Transistor
New Old Stock, No longer available for export
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | No |
