Details
2SK791 Toshiba N-Channel MOSFET Transistor
Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Maximum Power Dissipation: 100 W
- Maximum Drain-Source Voltage: 850 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 3 A
- Maximum Junction Temperature: 150 °C
- Rise Time: 55 nS
- Output Capacitance: 120 pF
- Maximum Drain-Source On-State Resistance: 4.5 Ohm
- Package: TO220AB
MFR: Toshiba
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Toshiba Electronics |