Details
2SK792 Toshiba N-Channel MOSFET Transistor 100 Watt
Designed to hangle high power levels.
- Maximum Power Dissipation: 100 W
- Maximum Drain-Source Voltage: 900 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Drain Current: 3 A
- Maximum Junction Temperature: 150 °C
- Rise Time: 55 nS
- Output Capacitance: 120 pF
- Maximum Drain-Source On-State Resistance: 4.5 Ohm
- Package: TO220AB
MFR:Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Toshiba Electronics |
