Details
3N153 Mos Field-Effect Transistor (NOS)
A silicon, insulated-gate field-efect transistor of the N-channel depletion type. Intended for critical chopper and multiplex applications up to 60MHz.
- Excellent thermal stability
- virtually zero inherent offset voltage
- low leakage current: 50 pA max
- Low "on" resistance: rDS(on)= 200Ω
- High "off" resistance: RDS(off) = 1010Ω
- Low feedback capacitance: Crss=0.34pf
- Low input capacitance: Ciss= 6pf
New Old Stock * No longer available for export
MFR: RCA / Texas Instruments
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | RCA / Texas INstruments |
