Details
4N25 Toshiba 6 Pin Dip Optoisolater Transistor (NOS)
The 4N25 device consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
- Most Economical Optoisolator Choice for Medium Speed, Switching Applications
- Meets or Exceeds All JEDEC Registered Specifications
- For General Purpose Switching Circuits
- Interfacing and coupling systems of different potentials and impedances
- I/O Interfacing - Solid State Relays
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 20% @ 10mA
- Rise / Fall Time (Typ): 3µs, 3µs
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: 100mA
- Voltage - Forward (Vf) (Typ): 1.2V
- Current - DC Forward (If) (Max): 80 mA
- Vce Saturation (Max): 500mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Supplier Device Package: 6-DIP
New Old Stock
MFR: Toshiba
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Toshiba Electronics |
