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3SK39 Matsushita Field-Effect Transistor (NOS)

$4.91
In Stock
OR

  • Type of Control Channel: N -Channel

  • Maximum Power Dissipation: 0.25 W

  • Maximum Drain-Source Voltage: 20 V

  • Maximum Gate-Source Voltage: 7 V


New Old Stock * No longer available for export
MFR: Matsushita
SKU: 3SK39


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Details

3SK39 Matsushita Field-Effect MOSFET Transistor (NOS)

  • Type Designator: 3SK39
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation: 0.25 W
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 7 V
  • |Maximum Drain Current: 0.024 A
  • Maximum Junction Temperature: 175 °C
  • Coss - Output Capacitance: 4.5 pF
  • Rds - Maximum Drain-Source On-State Resistance: 200 Ohm
  • Package: TO72

New Old Stock * No longer available for export
MFR: Matsushita

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer No
Condition New
NOS No
Call For Price No
Manufacturer Name Matsushita

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