Details
3SK39 Matsushita Field-Effect MOSFET Transistor (NOS)
- Type Designator: 3SK39
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation: 0.25 W
- Maximum Drain-Source Voltage: 20 V
- Maximum Gate-Source Voltage: 7 V
- |Maximum Drain Current: 0.024 A
- Maximum Junction Temperature: 175 °C
- Coss - Output Capacitance: 4.5 pF
- Rds - Maximum Drain-Source On-State Resistance: 200 Ohm
- Package: TO72
New Old Stock * No longer available for export
MFR: Matsushita
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Matsushita |