F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)
In Stock
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
SKU: F2012
Details
F2012 Polyfet Silicon Gate RF Power VDMOS Transistor 10 Watts Single Ended 28 Volts 10dB Gain 1 GHz (NOS)
MFR: Polyfet
New Old Stock * No longer available for export
Matched Pairs available upon request.
NOTE: See Data Sheet for more info.
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | N/A |
| ISBN | N/A |
| NATO Stock Number | N/A |
| Manufacturer Part Number | N/A |
| Manufacturer | Polyfet |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Polyfet |
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