F2012 Silicon Gate Enhancement Mode, RF Power VDMOS Transistor, 10 Watts Single Ended, 28 Volts, 10dB Gain, 1 GHz
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
NOTE: See Data Sheet for more info.
Limited Quantity Available, New Old Stock - Matched Pairs available upon request.
|Made in the USA||N/A|