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F2012 VDMOS Transistor, 10 Watts Single Ended, 28 Volts, 10dB Gain, 1 GHz, Polyfet

F2012  VDMOS Transistor, 10 Watts Single Ended, 28 Volts, 10dB Gain, 1 GHz, Polyfet

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Quick Overview

F2012  Silicon Gate Enhancement Mode, RF Power VDMOS Transistor, 10 Watts Single Ended, 28 Volts, 10dB  Gain, 1 GHz, MFR: Polyfet


Limited Quantity Available, New Old Stock


Details

F2012  Silicon Gate Enhancement Mode, RF Power VDMOS Transistor, 10 Watts Single Ended, 28 Volts, 10dB  Gain, 1 GHz

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

MFR: Polyfet

NOTE: See Data Sheet for more info.

Limited Quantity Available, New Old Stock - Matched Pairs available upon request.

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