Details
IRF540N IR HEXFET® Power MOSFET
This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Transistor Polarity:N Channel
- Continuous Drain Current Id:33A
- Drain Source Voltage Vds:100V
- On Resistance Rds(on):0.044ohm
- Rds(on) Test Voltage Vgs:10V
- Threshold Voltage Vgs:4V
- No. of Pins: 3 Pins
- Operating Temperature Max:175°C
MFR: IR
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | DALBANI |