Details
MJE180 Samsung Silicon NPN Transistor 12W (NOS)
- Maximum Collector Power Dissipation (Pc): 12 W
- Maximum Collector-Base Voltage |Vcb|: 60 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 7 V
- Maximum Collector Current |Ic max|: 3 A
- Max. Operating Junction Temperature (Tj): 150 °C
- Transition Frequency (ft): 50 MHz
- Collector Capacitance (Cc): 40 pF
- Forward Current Transfer Ratio (hFE), MIN: 50
- Package: TO126
New Old Stock
MFR: Samsung
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Samsung |
