MPSA92 General Electric Silicon High Voltage PNP Transistor

MPSA92 General Electric Silicon High Voltage PNP Transistor Transistor

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

Collector-Base Voltage: 300V
Collector-Emitter Voltage: 300V
Emitter-Base Voltage: 5.0V
Continuous Collector Current: 500mA
Power Dissipation: 625 mW
Power Dissipation (TC=25°C): .5 W
Operating and Storage Junction Temperature: -65 to +150 °C
Thermal Resistance: 200 °C/W
Thermal Resistance: 83.3 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C)

CBO VCB=200V: 250nA
EBO VEB=3.0V: 00nA
BVCBO IC=100μA: 300V
BVCEO IC=1.0mA: 300V
BVEBO IE=100μA: 5.0V
VCE(SAT) IC=20mA, IB=2.0mA: 0.5V
VBE(SAT) IC=20mA, IB=2.0mA: 0.9V
hFE VCE=10V, IC=1.0mA: 25
hFE VCE=10V, IC=10mA: 40
hFE VCE=10V, IC=30mA: 25
fT VCE=20V, IC=10mA, f=100MHz: 50MHz
Cob VCB=20V, IE=0, f=1.0MHz: 6.0pF

MFR: General Electric