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MPSH10 National Semiconductor Bipolar RF Transistor Pack of 4 (NOS)

$0.91
In Stock
OR

  • Maximum DC Collector Current: 50 mA

  • Pd - Power Dissipation: 350 W

  • Gain Bandwidth Product fT: 650 MHz


New Old Stock * No longer available for export
MFR: National Semiconductor
SKU: MPSH10


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Details

MPSH10 National Semiconductor Transistor Pack of 4 (NOS)

  • Mounting Style: Through Hole
  • Package / Case: TO-92-3
  • Transistor Polarity: NPN
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 25 V
  • Collector- Base Voltage VCBO: 30 V
  • Emitter- Base Voltage VEBO: 3 V
  • Collector-Emitter Saturation Voltage: 500 mV
  • Maximum DC Collector Current: 50 mA
  • Pd - Power Dissipation: 350 W
  • Gain Bandwidth Product fT: 650 MHz
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Continuous Collector Current: 450 mA
  • DC Collector/Base Gain hfe Min: 60
  • Product Type: BJTs - Bipolar Transistors
  • Technology: Si

New Old Stock * No longer available for export
MFR: National Semiconductor

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer National Semiconductor
Condition New
NOS Yes
Call For Price No
Manufacturer Name National Semiconductor

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