Details
UF28100V Philips RF MOSFET Transistors 100-500MHz 100Watts 28Volt 10dB (NOS)
- Transistor Polarity: N-Channel
- Technology: Si
- Id - Continuous Drain Current: 12 A
- Vds - Drain-Source Breakdown Voltage: 65 V
- Operating Frequency: 100 MHz to 500 MHz
- Gain: 10 dB
- Output Power: 100 W
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Mounting Style: SMD/SMT
- Package / Case: 744A-01
- Forward Transconductance - Min: 1.5 S
- Pd - Power Dissipation: 250 W
- Vgs - Gate-Source Voltage: 20 V
- Vgs th - Gate-Source Threshold Voltage: 6 V
New Old Stock * No longer available for export
MFR: Philips
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | No |
| ISBN | No |
| NATO Stock Number | No |
| Manufacturer Part Number | No |
| Manufacturer | No |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Philips |