Details
RFM00U7U Toshiba Transistor 200mw 10.8dB Surface Mount (NOS)
VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.
- Output power: PO = 200 mW (typ.)
- Gain: GP = 10.8 dB (typ.)
- Drain efficiency: ηD = 50% (typ.)
New Old Stock * No longer available for export
MFR: Toshiba
See Data Sheet for more information
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Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | Toshiba |
Condition | New |
NOS | Yes |
Call For Price | No |
Manufacturer Name | TOSHIBA AMERICA ELECTRONICS COMPONENTS |