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RFM00U7U Transistor, 200mw, 10.8dB, Surface Mount, Toshiba

RFM00U7U  Transistor, 200mw, 10.8dB, Surface Mount, Toshiba
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RFM00U7U  Transistor, 200mw, 10.8dB, Surface Mount, MFR: Toshiba


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Details

RFM00U7U  Transistor, 200mw, 10.8dB, Surface Mount

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  •  Output power: PO = 200 mW (typ.)
  •  Gain: GP = 10.8 dB (typ.)
  •  Drain efficiency: ηD = 50% (typ.)

MFR: Toshiba

Limited Quantity Available

See Data Sheet for more information

Additional Information

Made in the USA N/A
Manufacturer N/A

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