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RFM04U6P Transistor, 4.3 watt, 13.3dB, Surface Mount, Toshiba

RFM04U6P  Transistor, 4.3 watt, 13.3dB, Surface Mount, Toshiba

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Quick Overview

RFM04U6P  Transistor, FET, Silicon N Channel MOS Type, VHF- and UHF-band Amplifier Applications, 4.3 watt , 13.3dB, MFR: Toshiba

Details

RFM04U6P  Transistor, FET, Silicon N Channel MOS Type, VHF- and UHF-band Amplifier Applications

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  • Output power: PO = 4.3W (typ)
  • Gain: G= 13.3dB (typ)
  • Drain efficiency: η= 70% (typ)

MFR: Toshiba

Limited Quantity Available

See Data Sheet for more information

 

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