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RFM08U9X Transistor, 7.5watt, 11,7dB, Surface Mount, Toshiba

RFM08U9X  Transistor, 7.5watt, 11,7dB, Surface Mount, Toshiba

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Quick Overview

RFM08U9X  Transistor, RF POWER MOSFET FOR VHFAND UHFBAND POWER AMPLIFIER, SILICON N CHANNEL MOS TYPE, 7.5 Watt, 11.7dB, Surface Mount, MFR: Toshiba

Details

RFM08U9X  Transistor, RF POWER MOSFET FOR VHFAND UHFBAND POWER AMPLIFIER, SILICON N CHANNEL MOS TYPE

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

  • Output Power : PO ≥  7.5W
  • Power Gain : GP ≥  11.7dB
  • Drain Efficiency : ηD ≥  50%

 MFR: Toshiba

 

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