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2SC2290 Toshiba Transistor Early version Single (1) (NOS)

$62.91
In Stock
OR

The 2SC2290 transistor offers high gain and high power output, making it suitable for use in high-frequency power amplifier circuits. It also features a low input capacitance, which allows it to operate at higher frequencies than many other transistors. Additionally, the transistor has a compact and lightweight design, making it easy to integrate into various electronic devices and systems.


The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.


The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.


Silicon NPN Power Transistor Epitaxial Planar Type (Early Version) (NOS)
New Old Stock * No longer available for export
MFR: Toshiba, Japan
SKU: 2SC2290


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Details

2SC2290 Toshiba Transistor (Early Version)

The 2SC2290 is a bipolar junction transistor (BJT) designed and manufactured by Toshiba Corporation. It is a high-frequency transistor commonly used in RF power amplifier circuits.

The transistor is classified as an NPN transistor, which means it is made up of three layers of doped semiconductor material with a P-type layer sandwiched between two N-type layers. The 2SC2290 transistor is designed to operate with a maximum collector-emitter voltage (Vce) of 12.5 volts and a maximum collector current (Ic) of 8 amps.

The early version of the 2SC2290 transistor was a single transistor package. This version was commonly used in a variety of applications, such as in citizen band (CB) radios, linear amplifiers, and other high-frequency communication systems.

The 2SC2290 transistor offers high gain and high power output, making it suitable for use in high-frequency power amplifier circuits. It also features a low input capacitance, which allows it to operate at higher frequencies than many other transistors. Additionally, the transistor has a compact and lightweight design, making it easy to integrate into various electronic devices and systems.

The 2SC2290 transistor is a high-quality and reliable component that offers excellent performance in a wide range of high-frequency applications. Its high power output, frequency range, and compact design make it a popular choice for use in various RF power amplifier circuits.

Silicon NPN Epitaxial Planar TypeTransistor Not Pb Free RoHS compliant

2-30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)

  • Specified 12.5V, 28MHz Characteristics
  • Output Power : Po=60W PEP
  • Power Gain : Gp=11.8dB (min.)
  • Collector Efficiency : C = 35% (Min.)
  • Intermodulation Distortion : IMD = - 30dB (Max.)

For More info see data sheet

New Old Stock * No longer available for export
MFR: Toshiba, Japan

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer No
Condition New
NOS Yes
Call For Price No
Manufacturer Name TOSHIBA AMERICA ELECTRONICS COMPONENTS

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