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ATF10135 Avantek RF Small Signal Field-Effect Transistor (NOS)

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$2.91
In Stock
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  • DS Breakdown Voltage-Min: 5.0 V

  • Number of Terminals: 4

  • Power Gain-Min (Gp): 12.0 dB

  • Transistor Element Material: GALLIUM ARSENIDE


  • New Old Stock * No longer available for export
    MFR: Avantek
    SKU: ATF10135


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    Details

    ATF10135 Avantek RF Small Signal Field-Effect Transistor (NOS)

    • REACH Compliant Yes
    • Status Discontinued
    • Configuration: SINGLE
    • DS Breakdown Voltage-Min: 5.0 V
    • FET Technology: JUNCTION
    • Highest Frequency Band: X BAND
    • JESD-30 Code: X-CXMW-F4
    • Number of Elements: 1.0
    • Number of Terminals: 4
    • Operating Mode: DEPLETION MODE
    • Package Body Material: CERAMIC, METAL-SEALED COFIRED
    • Package Shape: UNSPECIFIED
    • Package Style: MICROWAVE
    • Polarity/Channel Type: N-CHANNEL
    • Power Gain-Min (Gp): 12.0 dB
    • Surface Mount: YES
    • Terminal Form: FLAT
    • Terminal Position: UNSPECIFIED
    • Transistor Application: AMPLIFIER
    • Transistor Element Material: GALLIUM ARSENIDE

    New Old Stock * No longer available for export
    MFR: Avantek

    Additional Information

    Featured Product No
    Made in the USA No
    GTIN No
    ISBN No
    NATO Stock Number No
    Manufacturer Part Number No
    Manufacturer No
    Condition New
    NOS No
    Call For Price No
    Manufacturer Name Avantek

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