Details
BF966S Vishay N Channel Dual Gate MOS - Field Effect Triode Depletion Mode Transistor (NOS)
- EU RoHS: Compliant
- ECCN (US): EAR99
- Part Status: Obsolete
- HTS: 8541.21.00.95
- Configuration: Single Dual Gate
- Channel Mode: Depletion
- Channel Type: N
- Number of Elements per Chip: 1
- Maximum Drain Source Voltage (V): 20
- Maximum Gate Source Voltage (V): ±8
- Maximum Continuous Drain Current (A): 0.03
- Typical Input Capacitance @ Vds (pF): 2.2@15V @ Gate 1|1.1@15V @ Gate 2
- Typical Reverse Transfer Capacitance @ Vds (pF): 0.025 @ 15V
- Typical Output Capacitance @ Vds (pF): 0.8 @ 15V
- Typical Forward Transconductance (S): 0.0185
- Maximum Power Dissipation (mW): 200
- Typical Power Gain (dB): 25
- Minimum Operating Temperature (°C): -55
- Maximum Operating Temperature (°C): 150
- Mounting: Surface Mount
- PCB changed: 4
- Supplier Package: TO-50
- Pin Count: 4
New Old Stock * No longer available for export
MFR: Vishay
Additional Information
Featured Product | No |
---|---|
Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | Vishay |