Low Noise Gas Fet
Low Noise Gas Fet
This category features low noise gas field-effect transistors (FETs) designed for high-performance applications. These FETs are ideal for circuit configurations that require minimal noise interference. Explore our selection to find the right component for your project.
MGA87563 Hewlett Packard Low Current GaAs MMIC Amplifier 0.5-4.3 GHz 3 Volts (NOS)
In Stock
The MGA-87563 low noise RF amplifier is designed to simplify wireless RF applications in the 0.5 to 4 GHz frequency range. The MGA-87563 is a two-stage, GaAs Microwave Monolithic Integrated Circuit (MMIC) amplifier that uses feedback to provide wideband gain. The output is matched to 50 Ω and the input is partially matched for optimum noise figure.
New Old Stock * No longer available for export
MFR: Hewlett Packard Company
SKU: MGA87563-BLK
MRF966 Motorola N-Channel Dual-Gate GaAs Field-Effect Transistor 12V (NOS)
In Stock
Depletion mode dual-gate MES FET designed for high frequency amplifier and mixer applications.
New Old Stock * No longer available for export
MFR: Motorola
SKU: MRF966
3SK177 NEC N-Channel GaAs Dual-Gate MES Filed-Effect Transistor (NOS)
In Stock
- RF Amplifier for UHF TV Tuner.
- 4 PIn Mini Mold
New Old Stock * No longer available for export
MFR: NEC Corporation
SKU: 3SK177
3SK174 / NE25137 NEC Dual Gate FET Transistor (NOS)
In Stock
New Old Stock * No longer available for export
MFR: NEC
SKU: 3SK174/NE25137
MGF4919G Mitsubishi GaAs Fet Transistor
In Stock
GaAs Fet Transistor
MFR: Mitsubishi
SKU: MGF4919G
MGF4319G Mitsubishi GaAs fet
In Stock
Transisor, GaAs fet
MFR: Mitsubishi
SKU: MGF4319G
MGF1501 N-Channel FET (NOS)
In Stock
Power Dissipation (PD):0.15 W
Drain current (ID):0.06 A
Drain-source voltage (VDSS):6
New Old Stock
SKU: MGF1501
MGF1302 Mitsubishi Low-Noise GaAs FET Transistor (NOS)
In Stock
MGF1302 Mitsubishi Low-Noise GaAs FET (NOS)
The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.
New Old Stock * No longer available for export
MFR: Mitsubishi
BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
In Stock
Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.
- Drain Source Voltage (MAX): 18v
- Drain Current (MAX): 30mA
- Total Power disipation (MAX): 225mW
New Old Stock * No longer available for export
MFR: Philips Electronics
SKU: BF980
