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BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)

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$2.91
In Stock
OR

Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.



  • Drain Source Voltage (MAX): 18v

  • Drain Current (MAX): 30mA

  • Total Power disipation (MAX): 225mW


New Old Stock * No longer available for export
MFR: Philips Electronics
SKU: BF980


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Details

BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)

Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.

  • Drain Source Voltage (MAX): 18v
  • Drain Current (MAX): 30mA
  • Total Power disipation (MAX): 225mW

New Old Stock * No longer available for export
MFR: Philips Electronics

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer No
Condition New
NOS No
Call For Price No
Manufacturer Name No

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