Details
BF980 Philips Silicon N-Channel Dual Gate MOS-FET Transistor (NOS)
Depletion type field-effect trnasistor in a plastic X-package. Intended for UHF applications with 12v Supply voltage.
- Drain Source Voltage (MAX): 18v
- Drain Current (MAX): 30mA
- Total Power disipation (MAX): 225mW
New Old Stock * No longer available for export
MFR: Philips Electronics
Additional Information
Featured Product | No |
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Made in the USA | No |
GTIN | No |
ISBN | No |
NATO Stock Number | No |
Manufacturer Part Number | No |
Manufacturer | No |
Condition | New |
NOS | No |
Call For Price | No |
Manufacturer Name | No |