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MRF313-MA NPN Silicon High-Frequency Transistor, 1.0 W, 400 MHz, 28 V, M/A-COM

MRF313-MA NPN Silicon High-Frequency Transistor, 1.0 W, 400 MHz, 28 V, M/A-COM

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Quick Overview

MRF313-MA NPN Silicon High-Frequency Transistor, 1.0 W, 400 MHz, 28 V, M/A-COM

Details

MRF313 NPN Silicon High-Frequency Transistor, 1.0 W, 400 MHz, 28 V, M/A-COM

Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.

  • Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
  • Emitter ballast and low current density for improved MTBF
  • Common emitter for improved stability

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