MRF313 NPN Silicon High-Frequency Transistor, 1.0 W, 400 MHz, 28 V, M/A-COM
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
- Specified 28 V, 400 MHz characteristics — Output power = 1.0 W, Power gain = 15 dB min., Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
|Made in the USA||N/A|