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MRF421-MA NPN Silicon Power Transistor, 100 W (PEP), 30 MHz, 12 V, M/A-COM

MRF421-MA NPN Silicon Power Transistor, 100 W (PEP), 30 MHz, 12 V, M/A-COM

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Quick Overview

MRF421-MA NPN Silicon Power Transistor, 100 W (PEP), 30 MHz, 12 V, MFR: M/A-COM

Details

MRF421 NPN Silicon Power Transistor, 100 W (PEP), 30 MHz, 12 V, M/A-COM

Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

  • Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
  • Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR
  • Specifications
  • Min Frequency: 1 MHz
  • Gain: 10 dB
  • Bias Voltage: 12.5 V
  • Max Frequency: 30 MHz
  • Efficiency: 40 %
  • Pout: 100 W

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