MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

MRF421 M/A-COM NPN Silicon Power Transistor 100 W (PEP) 30 MHz 12 V

Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.

• Specified 12.5 V, 30 MHz characteristics — Output power = 100 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
• Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Min Frequency: 1 MHz
• Gain: 10 dB
• Bias Voltage: 12.5 V
• Max Frequency: 30 MHz
• Efficiency: 40 %
• Pout: 100 W

MFR: M/A-COM