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MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

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Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.



  • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%

  • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)

  • 100% tested for load mismatch at all phase angles with 30:1 VSWR


MFR: MA/COM


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Details

MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

  • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
  • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
  • 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: MA/COM

Additional Information

Featured Product No
Made in the USA No
GTIN No
ISBN No
NATO Stock Number No
Manufacturer Part Number No
Manufacturer M/A-COM
Condition New
NOS No
Call For Price No
Manufacturer Name M/A-Com

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