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MRF160 M/A-COM RF MOSFET Broadband Power FET 4W to 500MHz 28V

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Designed primarily for wideband large–signal output and driver from 30–500 MHz.
N–Channel enhancement mode MOSFET



  • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)

  • Excellent thermal stability, ideally suited for Class A operation

  • Facilitates manual gain control, ALC and modulation techniques

  • 100% Tested for load mismatch at all phase angles with 30:1 VSWR

  • Low Crss – 0.8 pF Typical at VDS = 28 V


MFR: M/A-COM
SKU: MRF160-MA


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Details

MRF160 M/A-COM  RF MOSFET Broadband Power FET 4W to 500MHz 28V

Designed primarily for wideband large–signal output and  driver from 30–500 MHz.
N–Channel enhancement mode MOSFET

  • Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
  • Excellent thermal stability, ideally suited for Class A operation
  • Facilitates manual gain control, ALC and modulation techniques
  • 100% Tested for load mismatch at all phase angles with 30:1 VSWR
  • Low Crss – 0.8 pF Typical at VDS = 28 V

MFR: M/A-COM

Additional Information

Featured Product No
Made in the USA No
GTIN N/A
ISBN N/A
NATO Stock Number N/A
Manufacturer Part Number N/A
Manufacturer M/A-COM
Condition New
NOS No
Call For Price No
Manufacturer Name M/A-COM

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