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MRF160 Transistor, RF MOSFET: Broadband Power FET 4W, to 500MHz, 28V, M/A-COM

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MRF160 RF MOSFET: Broadband Power FET 4W, to 500MHz, 28V, MFR: M/A-COM


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Details

MRF160 RF MOSFET: Broadband Power FET  4W, to 500MHz, 28V

Designed primarily for wideband large–signal output and  driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
• Guaranteed 28 V, 500 MHz performance  Output power = 4.0 W  Gain = 16 dB (min.)  Efficiency = 55% (typ.)
• Excellent thermal stability, ideally suited for Class A operation
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismatch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V

Additional Information

Featured Product No
Made in the USA No
Manufacturer M/A-COM

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