Details
RD07MVS1B Mitsubishi MOSFET Silicon Power Transistor 175MHz - 520MHz 7Watt (NOS)
- RD07MVS1B is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications, with improved a drain surge than RD07MVS1 by optimizing MOSFET structure.
- High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
- High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz)
- For output stage of high power amplifiers in VHF/UHF band mobile radio sets.
RD07MVS1B-101 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
New Old Stock * No longer available for export
MFR: Mitsubishi
Additional Information
| Featured Product | No |
|---|---|
| Made in the USA | No |
| GTIN | N/A |
| ISBN | N/A |
| NATO Stock Number | N/A |
| Manufacturer Part Number | N/A |
| Manufacturer | Mitsubishi |
| Condition | New |
| NOS | No |
| Call For Price | No |
| Manufacturer Name | Mitsubishi |
Product Attachments
| rd07mvs1b |  441.2 KB |
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