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MRF966 N-Channel Dual-Gate GaAs Field-Effect Transistor, 12 V, Motorola

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MRF966 N-Channel Dual-Gate GaAs Field-Effect Transistor, 12 V, MFR: Motorola


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Details

MRF966 N-Channel Dual-Gate GaAs Field-Effect Transistor, 12 V, Motorola

Depletion mode sual-gate MES FET designed for high frequency amplifier and mixer applications.

  • Excellent Receiver Front End
  • Low Noise Figure- NF= 1.2 dB, 1 GHz (Typ)
  • High Power Gain- Gp= 17 dB, 1 GHz (Typ)
  • Fully Characterized
  • Gold Metallization

Additional Information

Featured Product N/A
Made in the USA N/A
Manufacturer Motorola

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