MRF966 N-Channel Dual-Gate GaAs Field-Effect Transistor, 12 V, Motorola
Depletion mode sual-gate MES FET designed for high frequency amplifier and mixer applications.
- Excellent Receiver Front End
- Low Noise Figure- NF= 1.2 dB, 1 GHz (Typ)
- High Power Gain- Gp= 17 dB, 1 GHz (Typ)
- Fully Characterized
- Gold Metallization
|Made in the USA||N/A|