MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

• Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
• 100% tested for load mismatch at all phase angles with VSWR 30:1
• Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
• Simplified AVC, ALC and modulation
• Typical data for power amplifiers in industrial and commercial applications:
• Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
• Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

MRF: M/A-COM