Diodes

The diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting.

• Maximum Tmeperature: -60^oC to +100^oC
• DC Power Dissipation: 100mW
• Inductance: 3.0nH

New Old Stock * No longer available for export
MFR: Hewlett Packard
SKU: 5082-2970

Data Sheet

Designed for use in high frequency applications or where a fast recovery diode is a necessity.

• Peak Reverse Current: 25mA
• Repetitive Peak Reverse Voltage: 100v
• Non-Repetitive Peak Reverse Voltage: 200v
• DC Reverse Voltage: 100v

New Old Stock * No longer available for export
MFR: General Electric Company
SKU: A187A

Designed for applications from UHF to 23.984 GHz

New Old Stock * New In Box * No longer available for export
MFR: Sylvania
SKU: 1N26-SYL

Designed for applications from UHF to 3.06 GHz

New Old Stock * New In Box * No longer available for export
MFR: Sylvania
SKU: 1N21B-SYL

Designed for applications from UHF to 1000 MHz

New Old Stock * New In Box * No longer available for export
MFR: Sylvania
SKU: 1N25-SYL

Designed for applications from UHF to 1000 MHz

New Old Stock * New In Box * No longer available for export
MFR: Sylvania
SKU: 1N25-JHS-SYL

Designed for applications from UHF to 3.06 GHz

New Old Stock * New In Box * No longer available for export
MFR: Sylvania
SKU: 1N21CR-SYL

• Designed for applications from UHF through 9.375 GHz. 
• High burnout resistance
• Broadband operation and high tangetial signal sensitivity

New Old Stock * New In Box * No longer available for export
MFR: Sylvania Electric Products
SKU: 1N31-JHS

The 1N23WE is a silicon Mixer Diode designed for applications operating from 8.0 to 12.4MHz

• High Burnout resistance
• Low noise figure
• Hernetically sealed package

New Old Stock * New In Box * No longer available for export
MFR: Sylvania Electric Products
SKU: 1N23WE