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  1. RD70HVF1-101  Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS)

    RD70HVF1-101 Mitsubishi Transistor 70 Watt 175 MHz 12.5V (NOS)

    $47.91

    The RD70HVF1-101 is a Mitsubishi RF power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF frequency range, with a frequency range of 136-174 MHz.

    The RD70HVF1-101 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.

    Silicon MOSFET Power Transistor RoHS Compliant 175MHz 70W 520MHz 50W  (NOS)
    MFR #: RD70HVF1-101
    New Old Stock * No longer available for export
    MFR: Mitsubishi
    SKU: RD70HVF1

    See Data Sheet for more information

  2. RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    RD70HVF1C-501 Mitsubishi Silicon MOSFET Power Transistor 175MHz 70W / 520MHz 50W

    $43.91

    The RD70HVF1C-501 is a Mitsubishi silicon MOSFET power transistor that is designed for use in high-frequency power amplifier circuits. This transistor is specifically designed for use in the VHF and UHF frequency ranges, with a frequency range of 136-174 MHz and 400-520 MHz, respectively.

    The RD70HVF1C-501 transistor is a high-performance and reliable component that offers excellent performance in a wide range of VHF and UHF power amplifier applications. Its high power output, frequency range, and built-in matching circuit make it a popular choice for use in various radio communication systems, including amateur radio, commercial radio, and military radio systems.

    RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

    High power and High Gain:
    Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
    Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
    High Efficiency: 60%typ.on VHF Band
    High Efficiency: 55%typ.on UHF Band
    Integrated gate protection diode

    RoHS Compliant
    MFR: Mitsubishi
    SKU: RD70HVF1C-501

    See Data Sheet for more information

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