1-800-RFPARTS (1-800-737-2787) 1-760-744-0700 (USA) ORDERS: rfp@rfparts.com 435 S PACIFIC ST SAN MARCOS, CA 92078

Search results for 'rg-189 7/8" 50 ohm coax'

List  Grid 

per page
Set Ascending Direction
  1. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V Matched Pair (2)

    $257.91

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MFR: MA/COM
    SKU: MRF428MP-MA

  2. MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    MRF428 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 50 V

    Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 DB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) — IMD = -30 db (max.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MRF: M/A-COM
    SKU: MRF428-MA

  3. MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    MRF422 M/A-COM NPN Silicon Power Transistor 150 W (PEP) 30 MHz 28 V

    Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

    • Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
    • Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR

    MFR: MA/COM

  4. MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    MRF392 M/A-COM Controlled “Q” Broadband Power Transistor 125W 30 to 500MHz 28V

    Made with original Motorola Die

    Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

    • Specified 28 V, 400 MHz characteristics — Output power = 125 W, Typical gain = 10 dB, Efficiency = 55% (typ.)
    • Built–in input impedance matching networks for broadband operation
    • Push–pull configuration reduces even numbered harmonics
    • Gold metallization system for high reliability
    • 100% tested for load mismatch

    MRF: M/A-COM
    SKU: MRF392-MA

  5. MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    MRF327 M/A-COM Controlled “Q” Broadband Power Transistor, 80W 100 to 500MHz 28V

    Designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.

    • Guaranteed performance @ 400 MHz, 28 Vdc; Output power = 80 W over 225 to 400 MHz Band, Minimum gain = 7.3 dB @ 400 MHz
    • Built–in matching network for broadband operation using double match technique
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR
    • Gold metallization system for high reliability applications
    • Characterized for 100 =8 500 MHz

    MRF: M/A-COM
    SKU: MRF327-MA

  6. MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 17 pF typ. @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF275L-MA

  7. MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    $243.91

    Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
    • 100% tested for load mismatch at all phase angles with VSWR 30:1
    • Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
    • Simplified AVC, ALC and modulation
    • Typical data for power amplifiers in industrial and commercial applications:
    • Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
    • Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

    MRF: M/A-COM
    MRF275G-MA

  8. MRF176GV M/A-COM  RF MOSFET Transistor 200/150W 500MHz 50V

    MRF176GV M/A-COM RF MOSFET Transistor 200/150W 500MHz 50V

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GV-MA

  9. MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    MRF176GU M/A-COM Transistor, RF MOSFET 200/150W 500MHz 50V

    $179.91

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    MFR: M/A-COM
    SKU: MRF176GU-MA

  10. MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    MRF175GU M/A-COM Transistor 150 watt 28v 400 MHz

    Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N–Channel enhancement mode

    • Guaranteed performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix), Output power — 200 W, Power gain — 14 dB typ, Efficiency — 65% typ`
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 20 pF typ @ VDS = 28 V

    MRF: M/A-COM
    SKU: MRF175GU-MA

Items 101 to 110 of 158 total

Page:
  1. 9
  2. 10
  3. 11
  4. 12
  5. 13