Search results for '2,5MH rf choke'

Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.

• Specified 28 V, 30 MHz characteristics — Output power = 150 W (PEP), Minimum gain = 10 dB, Efficiency = 40%
• Intermodulation distortion @ 150 W (PEP) —IMD = –30 dB (min.)
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

MFR: M/A-COM
SKU: MRF422-MA-MQ

Transistor 33.50dBmW 13.5dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SK3079A

Transistor 28.0dBmW 8.0dB Surface Mount
New Old Stock * No longer available for export
MFR: Toshiba
SKU: 2SK3078A

• N-channel enhancement mode device
• DMOS structure
• Lower capacitances for broadband operation
• High saturated output power
• Lower noise figure than competitive devices

New Old Stock * No longer available for export
MFR: Philips
SKU: UF2820R

• Transistor Polarity: N-Channel
• Technology: Si
• Operating Frequency: 100 MHz to 500 MHz
• Gain: 10 dB
• Output Power: 100 W

New Old Stock * No longer available for export
MFR: Philips
SKU: UF28100V

• Optimized for SSB
• 30 MHz

New Old Stock * No longer available for export
MFR: ST Microelectronics
SKU: SD1727

SRF2017 RF Gain Transistor (NOS)

New Old Stock
MFR: RF Gain
SKU: SRF2017

SO2907A  Small Signal PNP Transistor, Surface Mount, Switching, MFR: SGS/Thomson

Silicon VDMOS transistor designed specifically for broadband RF applications.  Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
60 Watts Single Ended
New Old Stock * No longer available for export
* This part is direct cross for MRF255 *
MFR: Polyfet RF Devices
SKU: SM724

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