$78.91 As low as: $78.11
The BLF177 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
• 150W with 22dB Typical Gain @ 30MHz, 50V
• 150W with 14dB Typical Gain @ 175MHz, 50V
See Data Sheet for more information
BLF246B Philips VHF Push/Pull power MOS Transistor (NOS)
Dual silicon N-Channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.
Ruggedness in class-B operation, the BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 175 MHz at rated output power.
Limitied, New Old Stock available * No longer available for export