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BIRD Digital RF

BIRD5019B Power Sensor, Bird, BIRD5012D Bird TERMINATING POWER SENSOR, 350 MHz-4 GHz, For Bird 5000XT, , BIRD5011EF Bird TERMINATING POWER SENSOR, 40 MHz-12 GHz, For Bird 5000XT, , BIRD5A5000-1 Soft Carrying Case for 5000-XT, Digital Power Meter, BIRD, CD81030-110 C.D., digital wattmeter, 110 vac w/type-n female, Coaxial Dynamics, BIRD5010B Bird Power Sensor for 5000XT, Bird Electronics, BIRDAT500 - Bird Antenna Tester, Bird

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  1. 2SC1973 Matsushita NPN Epitaxial Planar Transistor (NOS)

    2SC1973 Matsushita NPN Epitaxial Planar Transistor (NOS)

    $2.91

    • Watts Output: 0.7
    • Watts Input: 0.03
    • Freq: 50 MHz
    • Case: SC-51

    New Old Stock * No longer available for export
    MFR: Matsushita
    SKU: 2SC1973

  2. 2SC1975 Matsushita NPN Power Transistor (NOS)

    2SC1975 Matsushita NPN Power Transistor (NOS)

    $1.91

    New Old Stock * No longer available for export
    MFR: Matsushita
    SKU: 2SC1975-MAT

  3. 2SC1986 SILICON POWER TRANSISTOR

    2SC1986 SILICON POWER TRANSISTOR

    $2.91

    2SC1986 SILICON POWER TRANSISTOR  No longer available for Export, (NOS)

  4. HA4CP103A Transistor

    HA4CP103A Transistor

    $19.95

    HA4CP103A Transistor

  5. MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    MRF275G M/A-COM RF Mosfet Transistor 150W 500MHz 28V

    $224.90

    Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power gain — 10 dB (min.), Efficiency — 50% (min.)
    • 100% tested for load mismatch at all phase angles with VSWR 30:1
    • Overall lower capacitance @ 28 V: Ciss — 135 pF, Coss — 140 pF, Crss — 17 pF
    • Simplified AVC, ALC and modulation
    • Typical data for power amplifiers in industrial and commercial applications:
    • Typical performance @ 400 MHz, 28 Vdc: Output power — 150 W, Power gain — 12.5 dB, Efficiency — 60%
    • Typical performance @ 225 MHz, 28 Vdc: Output power — 200 W, Power gain — 15 dB, Efficiency — 65%

    MRF: M/A-COM
    MRF275G-MA

  6. MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    MRF275L M/A-COM RF MOSFET Transistor 100W 500MHz 28V

    Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, N-Channel enhancement mode

    • Guaranteed performance @ 500 MHz, 28 Vdc: Output power — 100 W, Power gain — 8.8 dB typ., Efficiency — 55% typ.
    • 100% ruggedness tested at rated output power
    • Low thermal resistance
    • Low Crss — 17 pF typ. @ VDS = 28 V

    MFR: M/A-COM
    SKU: MRF275L-MA

  7. J110 Transistor, jfet

    J110 Transistor, jfet

    $1.91

    J110 Transistor, jfet

  8. J113 Siliconix N-Channel JFET Transistor 35v 625mw

    J113 Siliconix N-Channel JFET Transistor 35v 625mw

    $0.41

    This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers

    • Sourced from Process 51
    • Source & Drain are Interchangeable
    • These are Pb−Free Devices

    MFR: Siliconix
    SKU: J113

  9. J174 National Semiconductor JFET Transistor

    J174 National Semiconductor JFET Transistor

    $2.91

    • Transistor Polarity: P-Channel
    • Vgs - Gate-Source Breakdown Voltage: 30 V
    • Gate-Source Cutoff Voltage: 10 V
    • Drain-Source Current at Vgs=0: 4 mA to 16 mA
    • Rds On - Drain-Source Resistance: 85 Ohms

    MFR: National Semiconductor
    SKU: J174

  10. J310 JFet Transistor (NOS)

    J310 JFet Transistor (NOS)

    $1.91

    J310 JFet Transistor

    New Old Stock * no longer available for export
    SKU: J310

Items 1041 to 1050 of 1548 total

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