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Frequency Range: 940-960 MHz
Max Bandwidth: 940-960 MHz
Power Output: 8W
Supply Voltage: 12.5v

New Old Stock * No longer available for export
MFR: Mitsubishi
SKU: M67764

The RA07N4047M-501 is a high-quality and reliable RF module that offers a good balance of power handling, frequency range, and efficiency. It is a popular choice for use in a variety of applications where high-power and high-frequency operation are required, such as in wireless communication systems and other RF applications.

RF Module 400-470 MHz 7.5 Watt 9.6V
Efficiency: 43%
Power Input: 20mW
Case: H46

MFR: Mitsubishi
SKU: RA07N4047M-101

For more information go here

RD70HUP2 is a MOSFET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

• High Power and High Efficiency Pout=75Wtyp
• Drain Effi.=64.0%typ @ Vds=12.5V Idq=1.0A Pin=5.0W f=530MHz Pout=84Wtyp
• Drain Effi.=74%typ @ Vds=12.5V Idq=1.0A Pin=4.0W f=175MHz
• Integrated gate protection diode.

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HUP2-501

See Data Sheet

RF Power Module 440-520 MHz 7 Watt 9.6V
MFR: Mitsubishi
SKU: RA07N4452M-502

See Data Sheet for more information

2 Stage Amplifier for portable radio
Frequency Range: 400-470 MHz
Vdd: 12.5 V
Power Output: 7 W
Efficiency: 40%
Power Input: 20mW
Case: H46
RoHS compliant

MFR: Mitsubishi
SKU: RA07H4047M-501

For more information go here

Frequency Range: 135-175 MHz
Vdd: 12.5 Volts
Power Output: 8 Watts
Efficiency: 50%
Power Input: 20 mW
Case: H46
Rohs Compliant: Yes

MFR: Mitsubishi
SKU: RA08H1317M-501

See Data Sheet for more information

RD70HVF1C is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications 

High power and High Gain:
Pout>70W, Gp>10.6dB @Vds=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vds=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
Integrated gate protection diode

RoHS Compliant
MFR: Mitsubishi
SKU: RD70HVF1C-501

See Data Sheet for more information

MOSFET Silicon Power Transistor 175MHz - 520MHz 15W
RoHS Compliant
MFR #: RD15HVF1-501
MFR: Mitsubishi, Japan
SKU: RD15HVF1-501

EOL 12/2022

The RD100HHF1C-501 is a high-performance transistor suitable for use in a variety of applications where high-power and high-frequency operation are required, such as in radio transmitters, RF amplifiers, and other communications equipment.

The RD100HHF1C-501 is a power transistor designed for use in high-frequency applications, with a maximum operating frequency of 30MHz. It is capable of handling up to 100 watts of power and operates at a voltage of 12.5V.

Will replace the original RD100HHF1-101.

MOSFET Power Transistor 30MHz 100 Watts 12.5 Volts
RoHS Compliant
MFR: Mitsubishi
Made in Japan
SKU: RD100HHF1C-501

Data Sheet