Search results for 'RD16HHF1'

RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.

he RD16HHF1-501 is a reliable and efficient power transistor that offers a good balance of power handling and frequency range. It is a popular choice for use in a variety of applications, such as in amateur radio and other communication systems where reliable and efficient power amplification is required.

FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
APPLICATION: For output stage of high power amplifiers in HF band.

MFR: Mitsubishi, Japan
SKU: RD16HHF1-501

EOL 12/2022