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  1. MRF5015 Motorola RF Power Field Effect Transistor RF Mosfet N–Channel Enhancement–Mode 512 MHz 15W 12.5V (NOS)

    MRF5015 Motorola RF Power Field Effect Transistor RF Mosfet N–Channel Enhancement–Mode 512 MHz 15W 12.5V (NOS)

    $39.91

    Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment.

    • Guaranteed Performance at 512 MHz, 12.5 Volts: Output Power — 15 Watts, Power Gain — 10 dB Min, Efficiency — 50% Min
    • Characterized with Series Equivalent Large–Signal Impedance Parameters
    • S–Parameter Characterization at High Bias Levels
    • Excellent Thermal Stability
    • All Gold Metal for Ultra Reliability
    • Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5015

  2. MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)

    MRF5003 Motorola RF Power Field Effect Transistor RF MOSFET N–Channel Enhancement–Mode 512 MHz 7.5V 3.0W (NOS)

    $19.90

    Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equipment.

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5003

  3. MRF5007 Motorola RF Power Field Effect Mosfet Transistor RF 512 MHz 7.0W 7.5V (NOS)

    MRF5007 Motorola RF Power Field Effect Mosfet Transistor RF 512 MHz 7.0W 7.5V (NOS)

    $31.91

    RF Power Field Effect Transistor RF Mosfet 512 MHz 7.0W 7.5V
    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: MRF5007

  4. MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    MRF581A Microsemi RF and Microwave Discrete Low Power Transistor (NOS)

    $4.91

    Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

    • Low Noise - 2.5 dB @ 500 MHZ
    • High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
    • Ftau - 5.0 GHz @ 10v, 75mA
    • Cost Effective MacroX Package

    New Old Stock * No longer available for export
    MFR: Microsemi
    SKU: MRF581A-MSC

Items 31 to 34 of 34 total

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