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  1. 2N6166S Motorola Transistor NPN Silicon RF 100W 150 MHz (NOS)

    2N6166S Motorola Transistor NPN Silicon RF 100W 150 MHz (NOS)

    $29.90

    Transistor NPN Silicon RF 100W 150 MHz (NOS)

    • Short Leads
    • Output Power: 100 watts
    • Minimum Gain: 6.0 dB
    • Efficiency: 60%

    New Old Stock * No longer available for export
    MFR: Motorola
    SKU: 2N6166S

  2. 2N5031 Motorola RF & Microwave Discrete Low Power Transistor

    2N5031 Motorola RF & Microwave Discrete Low Power Transistor

    $1.91

    • 1.2 GHz Current-Gain Bandwidth @ 5mA IC
    • Maximum Unilateral Gain: 12dB (Typical) @ 400 MHz

    MFR: Motorola
    SKU: 2N5031-MOT

    Data Sheet

  3. 2N4033 Motorola Small Signal PNP Transistor 150MHz (NOS)

    2N4033 Motorola Small Signal PNP Transistor 150MHz (NOS)

    $1.90

    A silicon Planar Epitaxial PNP transistor intended for low noise industrial applications.

    • Maximum Collector Power Dissipation (Pc): 0.8 W
    • Maximum Collector-Base Voltage |Vcb|: 60 V

    New Old Stock
    MFR: Motorola
    SKU: 2N4033

  4. RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    RD70HUF2-501 Mitsubishi Transistor 70W 520 MHz 12.5V

    Transistor 70 Watts 520 MHz 12.5 Volts

    This MOS FET type transistor was specifically designed for VHF/UHF RF power amplifiers applications and for output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS Compliant

    MFR #: RD70HUF2-501
    MFR: Mitsubishi
    SKU: RD70HUF2

  5. RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor 16W 30 MHz 12.5V

    RD16HHF1-501 Mitsubishi Silicon MOSFET Power Transistor 16W 30 MHz 12.5V

    RD16HHF1 is a MOS FET transistor specifically designed for HF, RF power amplifiers applications.

    he RD16HHF1-501 is a reliable and efficient power transistor that offers a good balance of power handling and frequency range. It is a popular choice for use in a variety of applications, such as in amateur radio and other communication systems where reliable and efficient power amplification is required.

    FEATURES: High power gain: Pout>16 W, Gp>16 dB @Vdd=12.5 V,f=30 MHz.
    APPLICATION: For output stage of high power amplifiers in HF band.

    MFR: Mitsubishi, Japan
    SKU: RD16HHF1-501

    EOL 12/2022

  6. RD09MUP2-501 Mitsubishi Transistor

    RD09MUP2-501 Mitsubishi Transistor

    $6.91

    RoHS Compliance Silicon MOSFET Power Transistor 520MHz 8W 
    MFR: Mitsubishi (MFR #: RD09MUP2-101)
    SKU: RD09MUP2-501

  7. MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V Matched Pair (2)

    $279.91

    Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45% 
    • Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 3:1 VSWR

    ROHS Compliant.
    MFR: M/A-COM
    SKU: MRF448MP-MA

  8. MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V

    MRF448 M/A-COM NPN Silicon Power Transistor 250W 30 MHz 50V

    $139.91

    Designed primarily for high–voltage applications as a high–power linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz characteristics: Output power = 250 W, Minimum gain = 12 dB, Efficiency = 45% 
    • Intermodulation distortion @ 250 W (PEP) — IMD = –30 dB (max)
    • 100% tested for load mismatch at all phase angles with 3:1 VSWR

    ROHS Compliant.
    MRF: M/A-COM
    SKU: MRF448-MA

  9. MRF429 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 50 V

    MRF429 M/A-COM NPN Silicon Power Transistor Matched Pair 150 W (PEP) 30 MHz 50 V

    $212.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    • Specified 50 V, 30 MHz Characteristics —  Output power = 150 W (PEP), Minimum gain = 13 dB, Efficiency = 45%
    • Intermodulation distortion @ 150 W (PEP) —  IMD = –32 dB (Max)
    • Diffused emitter resistors for superior ruggedness
    • 100% tested for load mismatch at all phase angles with 30:1 VSWR @ 150 W CW

    MRF:M/A-COM
    SKU: MRF429MP-MA

  10. MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    MRF429 M/A-COM NPN Silicon Power Transistor 150W (PEP) 30 MHz 50V

    $105.91

    Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

    MFR: M/A-COM
    SKU: MRF429-MA

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